An Optoelectronic Transmission-Gate-Based Transimpedance Amplifier in 180 nm CMOS

This article presents an optoelectronic transmission-gate-based transimpedance amplifier (OTG-TIA) implemented by using a 0.18- $\mu $ m complementary metal-oxide-semiconductor (CMOS) technology for short-range light detection and ranging (LiDAR) sensor applications. Particularly, a transmission gate (TG) is strate- gically positioned between the on-chip P+/N-Well/Deep N-Well avalanche photodiode (APD) and the shunt-feedback voltage-mode inverter TIA. This configuration not only decouples the considerable photodiode capacitance from influencing the receiver bandwidth (BW) but also reduces the dc offset currents from the on-chip APD. Moreover, the OTG-TIA features a multistage inverter-chain architecture with dual-feedback resistors to improve the voltage gain and achieve the output impedance matching. Additionally, a TG-based automatic gain control (AGC) is employed alongside the feedback resistor, thereby extending the input dynamic range further. Prototype devices of the proposed OTG-TIA show a measured performance of 67.6-dB $\Omega $ transimpedance gain, 2.14-GHz BW, 57.5-dB input dynamic range, and 22.3-mW power consumption from a 1.8-V supply. The core circuit covers an area of $206\times 55.5~\mu $ m2.