Proposal and Simulation of β-Ga₂O₃ Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

In this work, we propose a p-NiO/n-Ga2O3 hetero-junction (HJ) Schottky barrier diode (SBD) with low turn-on voltage (Von) and high breakdown voltage (BV) with a trench SBD as a control. An investigation of its electrical characteristics is simulated by Sentaurus TCAD. The HJ SBD utilizes a low work-function anode metal to form a top electrode by reducing the $\rm V_{on}$ of the diode at the forward state. A fin structure and metal/semiconductor (M/S) junction or PN HJ was employed to achieve an enhanced BV at the reverse state. An attempt to optimize the electrical characteristics of the device by modifying its structural parameters is also comprehensively analyzed in this work. The HJ SBD achieves a low $\rm V_{on}$ of 0.57 V and a Power Figure of Merit (P-FOM) of 3.79 GW/cm2, simultaneously. The proposed structure provides a new approach for realizing high performance $\beta $ -Ga2O3 SBDs with high reverse blocking and low loss capabilities.