Effect of Temperature on the Sensitivity Parameters of an Indium Gallium Nitride Quantum Dot LED

A comprehensive numerical investigation was conducted to analyze the impact of ambient temperature on the performance characteristics of InGaN quantum dot light-emitting diodes (QD-LEDs) using three-dimensional simulations. A sensitivity analysis was performed to evaluate the parameters' temperature dependence. Six key output characteristics were examined, including internal quantum efficiency, oscillator strength, recombination lifetime, responsivity, power spectral distribution, and optical gain. Notably, responsivity was identified as the most temperature-sensitive parameter, significantly affecting the performance of QD-LEDs.