E-Mode Vertical β-Ga2O3 (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

This work presents the fabrication and performance analysis of a novel enhancement-mode (E-mode) vertical $\beta $ -Ga2O3 (010) U-trench MOSFET featuring an in-situ Mg-doped current blocking layer (CBL) for high-power applications. Utilizing metal-organic chemical vapor deposition (MOCVD), we achieved precise Mg doping of $1.3\times 10^{{19}}$ cm ${}^{{a}-{3}}$ within the CBL to enhance current blocking capability while maintaining a robust threshold voltage of 5 V and a low on-state resistance of 5 m $\Omega $ .cm2. The device achieved an on-current of 1.56 kA/cm2 at V ${}_{\textit {GS}} =20$ V and V ${}_{\textit {DS}} =40$ V. The fabricated devices demonstrate a peak breakdown voltage of 101 V with an average breakdown field strength of up to 1.68 MV.cm ${}^{-{1}}$ . The calculated power device Figure of Merit is 2 MW.cm ${}^{-{2}}$ .