Extraction of Trapping Voltage and Rate Over an Extended Bias Range for GaN and GaAs HEMTs

Electron trapping is significant to the performance of modern GaN and GaAs HEMTs. This paper presents a novel and simple technique for measuring the dynamic and steady-state trap voltages across a wide range of biases. Capture and emission rates of a trap can also be measured. In this way, trapping rates down to tens of nanoseconds can be evaluated. Calculated trapping voltages and rates can then be employed in formulating a simulation model.