A Physics-Based Compact Model for IGZO Channel FET Toward Subthreshold Characteristic Dependent Memory Application

InGaZnO (IGZO) transistors and their related memory applications have recently aroused great interest among researchers. In this article, we consider a shallow donor with a Gaussian distribution as positive charge in the IGZO channel to analyze surface potential ( $\varphi _{\text {S}}$ ) for subthreshold operation precisely. Meanwhile, a new surface potential analysis method for the IGZO channel is proposed considering 1) the effect of the floating body due to the lack of holes and 2) the effect of enhanced gate charge due to the electric field from the drain and source in the short channel. The proposed compact model demonstrates a good agreement with TCAD simulation and experimental results regarding device variation in all operation regions. Finally, a Monte Carlo simulation of IGZO ferroelectric field electric transistors (FeFET) and 2T0C IGZO FET DRAM, considering device and material properties variation shows the potential of this model for circuit-level simulations for memory applications.