Closed-Loop Control of GaN-HEMT-Based Buck Converter Using Modified RGDC

This paper explores a resonant gate driver circuit (RGDC) with closed-loop control for Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) in buck power conversion systems. Modern industries increasingly rely on high-frequency electronic devices, particularly Wide Bandgap (WBG) semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN), for their superior characteristics over conventional silicon. The RGDC design aims to minimize gate power loss during high-frequency operation, enhancing overall performance. Simulations validate the effectiveness of the approach, showcasing improved voltage stability, reduced overshoot, and enhanced regulation compared to open-loop control. The closed-loop scheme dynamically adjusts and maintains desired output levels, leading to enhanced performance, stability, and reliability in GaN HEMT-based converters.