Reduction of Leakage Current in Memristor Based Dynamic Random Access Memory (DRAM)

Memristor is a promising circuit element for future neuromorphic computing. The Vector Matrix Multiplication (VMM) can be successfully implemented using a memristor based crossbar array. On the other hand, a dynamic random-access memory (DRAM) is a nonvolatile memory where the periodic refresh mechanism is required to maintain the state of the memory. This work shows the application of memristor in DRAM. One major problem of a memristor is the leakage current. Various mechanisms are studied to reduce the leakage current and power dissipation of a memristor based DRAM circuit.