SiP Integrated Design of X-band TR Chip

In this paper, a SiP integrated design of X-band phased array TR amplitude-phase multi-function chip and GaAs chip is carried out to achieve the purpose of miniaturization of the chip. In the layout of the substrate chip of the SIP scheme, the design of 1 + 4 structure and 4 layers of substrate stack is adopted, and the heat dissipation scheme is designed and simulated. The RF vertical transition structure and channel isolation circuit are designed and simulated. Finally, the tape-out is completed, and the performance of the transmitting and receiving channels is tested to verify the feasibility of the SiP scheme.