Study of the Influence of Temperature and Geometric Modifications of an NMOS in CMOS Inverters

This paper presents investigates how temperature change and changes in the channel dimensions of NMOS transistors affect CMOS (Complementary Metal Oxide Semiconductor) circuit technology. In order to streamline this investigation, we initially identified important variables that define the device's performance and may be vulnerable to these influences. The analysis included important metrics such as the transfer characteristic, saturation point, and drain current. Notably, our simulation results revealed significant effects from temperature and geometric changes in NMOS. These parameters enabled us to validate the results obtained from the CADENCE simulator.