Single-Event Upset Laser Testing of Various SRAM Resources of a 7-nm FinFET System-on-Chip and Correlation With Heavy Ion Data

We present the single-event upset (SEU) laser testing of different static random access memory (SRAM) resources of a 7-nm fin field-effect transistor (FinFET) programmable system-on-chip (SoC). The results provide original insights into the physical organization of the device, and testing challenges are discussed. Multiple-cell upsets (MCUs) are discussed together with Monte Carlo simulation results. Correlation with heavy ion data is presented and discussed.