Performance Comparison for Speed Control of BLDC Motor for Different Switching Devices

Research and development of wideband gap semiconductor devices in various power electronics applications are rapidly increasing due to its various advantages over conventional semiconductor devices. This paper presents performance comparison for speed control of BLDC motor for different switching device like SiC MOSFET,GaN FET and Si power MOSFET. The proposed model uses PID controller for speed control of BLDC motor. Conventionally, Si MOSFET is used in inverter module for speed control of BLDC motor for many years. But emerging wide band gap semiconductor device have many advantages over conventional Si MOSFET like higher breakdown voltage and it can handle higher voltages thus making it suitable for higher power applications. Wide band gap semiconductor can be operated at higher temperature which in turn increases the reliability and also reduction in size as cooling requirements are less. Wide band gap semiconductors can switch on and off more quickly than silicon-based semiconductors, which can reduce switching losses and increase efficiency. In this paper, closed loop speed control of BLDC motor is achieved with Si MOFET in inverter subsystem, the same simulation model is achieved with SiC MOSFET and GaN FET in inverter subsystem to control speed of BLDC motor.The comparative performance analysis is tested for speed control of BLDC motor using different switching devices