Highly sensitive Si/h-BN exotic avalanche photo detector for applications in IR detection: A Detailed Numerical Investigation and Experimental Verification

This paper reports the superiority of superlattice Si/h-BN exotic Avalanche Photodiode over its flat profile Si counterpart in IR wavelength region. A Quantum Modified Schrodinger-Poisson Drift Diffusion model is established and applied to study the electro optical characteristic of superlattice Si/h-BN exotic Avalanche Photodiode for application in IR detection. The effect of $h-B N$ in the superlattice structure of the device under test is studied through a comprehensive simulation modeling. This depicts the betterment of external and internal quantum efficiency compared to its flat profile counterpart. This study also reports the suitability of $\operatorname{Si} / \mathrm{h}-\mathrm{BN}$ exotic based APD photo sensors in terms of better photo-responsivity over its flat profile Si counterpart. Significant Noise reduction in case of superlattice Si/h-BN exotic Avalanche Photodiode would open its application possibility as low noise single photon detector. The validity of an indigenously developed Quantum Modified Schrodinger-Poisson Drift Diffusion model is established through experimental verification. To the best of authors’ knowledge this is the first research report on superlattice $\mathrm{Si} / \mathrm{h}$ BN exotic Avalanche Photodiode as IR detector.