Transistors With MoS$_{2}$ Subnanometer Channels Embedded in 2D WSe$_{2}$

We investigate the exploitation of one of the latest advancements in the processing of the two-dimensional materials (2DMs) lateral heterostructures (LH) for electronic applications, which involves the generation of subnanometer one-dimensional (1D) channels embedded in a 2D crystal. Such study is done through a multiscale approach combining Density Functional Theory (DFT) and quantum transport calculations to propose and evaluate various Field-Effect Transistors (FETs) based on LH incorporating one-dimensional MoS$_{2}$ channels within monolayer WSe$_{2}$. We assess the ultimate performance of the transistors by considering different device configurations, lengths and orientations.