Drain Current Modeling of Antiambipolar TFTs in Subthreshold and Above-Threshold Regimes

The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain-source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.