Optimizing Design Turnaround in Angstrom-Scale Semiconductor Devices: A Correlation Analysis of Design Tool and Signoff DRCs

As semiconductor technology advances towards finer nodes, significant deviations from conventional Very Large-Scale Integration (VLSI) methodologies are inevitable. Innovations such as backside power delivery networks coupled with gate-all-around structures are anticipated to form the backbone of future angstrom-scale devices. These advancements introduce complex challenges for layout engineers, necessitating a comprehensive understanding of how DRC infractions within design tools correspond to actual layout discrepancies. Design Rule Checking (DRC) being an iterative process, that involves verifying whether a specific design adheres to the constraints imposed by the process technology, typically requires generating a layout and then addressing any issues within the design tool. This study presents a correlation analysis aimed at enabling preemptive resolution of these infractions during the design phase, consequently optimizing turnaround times in subsequent tape-out processes.