Design and Simulation Approaches of Resistive-Random Access Memory

Memory refers to a physical device storing data in bits. It may be 0 or 1. Storage and retrieval of information is essential for computer operation and memory acts as the primary foundation. Non-volatile memory is a type of storage that does not lose the data it contains after a power loss, just as volatile memory does. Re-RAM is one of the nonvolatile memories. Re-RAM is another outstanding non-volatile category that applies resistance switching from a high resistive state to a low resistive state and vice versa in metal-oxide layers to store data more quickly and at higher density. For instance, it has a low power rating, high endurance, and good data retention characteristics, and is thus suitable for energy-constrained mobile and embedded systems. This Paper demonstrates the simulation of Re-RAM which can be done using Verilog-A in Cadence Virtuoso and through code-level analysis with MATLAB.