Performance Analysis of Ge and InP MOSFETs in High Current Applications with SiO2/Al2O3/Ga2O3 Gate Oxides

This study analyzes the performance of Germanium (Ge) and Indium Phosphide (InP) MOSFETs with various gate oxide materials: SiO2, Al2O3, and Ga2O3 for high drain current applications. The paper develops a numerical model in COMSOL Multiphysics to simulate MOSFET behavior with these oxides, analyzing their impact on device performance. Results demonstrate that Ga2O3 offers the highest drain current and lowest threshold voltage among the oxides tested, significantly outperforming SiO2 and Al2O3. Specifically, Ge MOSFET with Ga2O3 exhibits drain currents up to 7397 μA, while InP MOSFETs with Al2O3 reach up to 6245 μA. The study compares these findings with existing research, highlighting the advantages of Ga2O3 and Al2O3 in optimizing high-current MOSFETs. The findings of this study suggest that Ga2O3 in Ge MOSFET is a promising candidate for enhancing the performance of high-current applications, particularly when compared to traditional gate oxide materials.