Simulation of Electrical-Thermal-Mechanical Deformation in IGBT Modules Under Alternating Loading Current

Insulated gate bipolar transistors (IGBTs) are the key semiconductor power devices in the systems of power electronics due to the advantages of large capacity, fast switching speed, easy to drive, low on-voltage and high input impedance. Due to the temperature swinging and mismatches of the coefficients of thermal expansion (CTE) of internal materials in IGBT modules, electrical-thermal-mechanical coupling is generated and inevitably results in thermal deformation. This thermal deformation is one of the key factors causing IGBT reliability issues. Therefore, it is of great significance to study the electrical-thermal-mechanical deformation characteristics of IGBT modules.