6.7 A 10b Source-Driver IC with All-Channel Automatic Offset Calibration and Slew-Rate-Enhanced Amplifier Achieving 2273pm2/Channel and 1.9mV DVO for 6285-PPI OLED-on-Silicon Displays

Recent microdisplays for augmented reality (AR) and virtual reality (VR) devices face distinct technical challenges compared to traditional displays, with the essential requirements being: (1) increasing field of view (FoV) and pixels per degree (PPD) to enhance user immersion, (2) high frame rates to prevent motion sickness, and (3) compact size for integration into small AR/VR devices. To meet these demands, micro displays for AR/VR devices must achieve a resolution of 4K×4K and a refresh rate of over 120Hz within a form factor of approximately 1 inch [1]–[10]. In this context, OLED-on-silicon (OLEDoS) technology is emerging as a promising alternative to thin-film transistor (TFT) based traditional displays. OLEDoS integrates the backplane circuits (pixel and driving circuits) onto a silicon substrate, with the OLED device connected on top. This approach leverages the high integration density of silicon-based integrated circuit technology, enabling the realization of ultra-high resolution while maintaining the advantages of traditional OLED displays. This paper introduces the technical challenges of source driver IC (SD-IC) for OLEDoS displays and proposes an advanced SD-IC architecture to address the challenges.