Threshold Switching Created VIA in Nanocircuitries: Theory and Experiment

We propose a mechanism of VIA generation based on threshold switching effects known earlier in the physics of solid-state memories and dielectric breakdowns of gate oxides. Our consideration shows that such VIA generation becomes possible under moderate electric fields around 10⁵ V/cm and evolves along the nucleation scenario, whose sensitivity to minute variations in chemical composition opens venue to purposely tweaking VIAs parameters and technology. We provide experimental results that can serve as proof of our concept.