Impact of Switching Behavior on the Noise Emission of Power Semiconductors

This paper presents a method to investigate the impact of switching behavior of power semiconductors on the electromagnetic noise emissions. The methodology emphasizes a new approach to analyze the noise source, which is the MOSFET, independently of the passive network around it. The method determines the noise contribution of all switching events individually, enabling the identification of the critical switching event. In the given example of a H-bridge converter, the dominant noise emitter is identified as the passive off of $\mathrm{Q}_{2}$ at a small resonance at 106 MHz and the passive off of $\mathrm{Q}_{3}$ in the broadband region between 10 MHz to 200 MHz. Findings from this study contribute to the development of technologies and strategies for mitigating noise in power electronic systems.