ELDRS in a Commercial 28-nm CMOS Technology

Evidence of enhanced low-dose-rate sensitivity (ELDRS) in total ionizing dose (TID)-induced leakage current increase was observed in ring oscillators (ROs) and static random access memories (SRAMs) in 28-nm CMOS technology exposed to ultrahigh doses. Elevated temperature irradiation on isolated devices is used to evaluate the dependence of ELDRS on bias conditions, device size, and threshold voltage. The results obtained show that irradiation at high temperatures can represent reasonably well ELDRS, providing a viable solution for accelerated radiation tests.