Exploring GaAs/InGaAs/GaAs 2DEG Inter-Subband Scattering Coefficients of Light-Emitting Transistors

This letter explores the inter-subband scattering properties in n-p-n quantum well heterojunction bipolar light-emitting transistors (QW-HBLETs or LETs). We showed a steady-state method to extract the inter-subband transition coefficients and get around the difficulty of RF characterization by fitting the concentration ratios of unbounded and bounded electrons in the QW to get the inter-subband scattering coefficients. Our investigation revealed that the inter-subband scattering coefficients decreased with increasing temperature and Fermi level in the two-dimensional electron gas. Additionally, we compared the capture lifetimes and the escape lifetimes of LETs to confirm the necessity of the Fermi level-dependent scattering coefficients.