Single-Ended Back-Bias Voltage Generator Using One Pumping Capacitor

As the dynamic random-access memory technology advances, the size of storage capacitors has diminished. This trend has been accompanied by the challenge of reading cell data reliably from the storage capacitor. One of the most common approaches to solving this problem is preserving stored data by suppressing the sub-threshold leakage current in the access transistors with a negative body bias with a back-bias voltage (VBB) generator. This paper introduces a single-ended VBB generator using only one pumping capacitor. Conventional VBB generators with single-ended structures have a threshold voltage loss and unwanted charge-sharing at internal nodes and load outputs, causing performance degradation. The proposed circuit addresses these issues by employing a grounded gate inverter and an n-channel metal-oxide semiconductor transistor as a discharge transistor. This novel configuration can generate a negative voltage up to the supply voltage level with only one pumping capacitor with merits of power and size. Using the DBHitek 0.18 lm process technology, the proposed circuit has the lowest power consumption, power-delay product, and better pumping efficiency compared to the conventional single-ended VBB generator circuits.