Maximum Chip Temperature Direct Monitoring for Press-Pack IGBT Integrating Temperature Sensors

Press-pack insulated gate bipolar transistor (PP IGBT) junction temperature online monitoring is of vital importance for the health management of high-voltage power conversion systems. The tradition methods destroy the packaging component and are difficult to obtain the maximum temperature of PP IGBT. A temperature sensor integrated method for directly obtaining the maximum temperature of PP IGBT chip is proposed in this article. Due to the uneven temperature distribution on the surface of the chip, the maximum temperature measurement depends on the mounting positions of temperature sensors. Three mounting positions of temperature sensors including the gap between gate pad and emitter molybdenum (Mo), the emitter Mo, and the gate pogo pin are reasonably proposed by theory analysis. The finite element simulations and constant current source tests show that as the clamping force increases, the maximum temperature point drifts from the center of the emitter surface to the gap. The maximum temperature of PP IGBT chip is increased after the emitter Mo is grooved. The mounting position located at the head of gate pogo pin avoids the influence of stress on the temperature sensor. The feasibility of the proposed method is verified based on a half-bridge inverter.