Memristor-Based Circuit of Sequential Associative Memory With Memory Interactions and Stimulus Similarity Effect

Most proposed memristor-based circuits of associative memory (AM) consider various mechanisms in only one AM. Few works on circuit design of sequential associative memory (SAM) have been reported. In this article, a memristor-based circuit of SAM with memory interactions and stimulus similarity effect is designed. Two associative memories, the prior associative memory (PAM) and the later associative memory (LAM), are formed successively. The PAM modifies the rate of the formation of the LAM, and the LAM, in turn, affects the strength of the PAM, which are two interactions in SAM, called transfer and retroaction. In addition, the magnitudes of transfer and retroaction are determined by the similarity of the conditioned stimuli. The above functions are realized by the ring input processing module, memory module, transfer module, and retroaction module. It has been identified in circuit analysis that the proposed circuit is power efficient and has good robustness. Furthermore, the proposed circuit has promising applications for fire rescue robots.