3D Trench Hf0.5Zr0.5O2-Based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read Speed, Low Power Consumption (0.605 pJ/bit) and Prominent High-Temperature Reliability (Baking @ 175°C)

Thisstudy proposes a novel 3D trench ferroelectric capacitor with $\mathrm{W}/\text{TiN}/\text{Hf}_{0.5}\text{Zr}_{0.5}\mathrm{O}_{2}/\mathrm{W}$ structure in a 32 Kb ferroelectric random access memory array. The device exhibits great uniformity and excellent high-temperature retention characteristics for over 10 years at 175°C. A physics-based compact model of 3D capacitors is developed for the FeRAM circuit simulations and tests which show the fastest write and read speeds of 2 ns and 5 ns, excellent endurance characteristic of $10^{12}$ cycles with memory window $> 120\ \text{mV}$, great retention characteristics up to 225°C and low power consumption of 0.605 pJ per bit. By using 3D trench structure, $2\mathrm{P}_{\mathrm{r}}\sim 35\ \text{uC}/\text{cm}^{2}$ at 1.8 V low operating voltage has been achieved at a device area as small as 0.07 $\text{um}^{2}$. Furthermore, the chip probing tests show high yield $(> 96\%)$ with 188 pass dies of total 194 dies at 175 °C and 100% pass rate after baking at 175°C for at least 140 hours. Excellent storage characteristics and high-temperature reliability of the memory arrays show great potential in future 3D ultra-high reliable FeRAM technology.