Enhancing 1.2 kV 4H-SiC MOSFET Performance and Ruggedness Through Deep P-Well Technology

This paper presents advancements in 1.2 kV 4H-SiC MOSFETs with deep P-well by optimizing the JFET width and the channel length. Channeling implantation was used to form a deep junction with low implantation energy. Overall, the implementation of a short channel length and narrow JFET width with the deep P-well structure offers significantly enhanced conduction behaviors and switching characteristics, suitable for power converter applications.