Achieving 1ppm Write-Error Rate in SOT-MRAM with Synthetic Antiferromagnetic Free Layer

We demonstrate the functionality of a perpendicular spin-orbit torque (SOT)-MRAM with a synthetic anti ferromagnetic (SAF) free layer in the magnetic tunnel junction (MTJ) pillar. This novel stack design significantly reduces the write error rate (WER) to as low as 10^‒6 while maintaining a thermal budget of 400°C, ensuring BEOL compatibility. Our micromagnetic simulations systematically guide the selection of key material parameters, ensuring reliable operation in real device demonstration. This correlation between simulation-guided material selection and experimental validation is crucial for advancing SOT-MRAM technology. Finally, our devices are fabricated on 300 mm wafers, enabling significant strides in technological integration.