Transfer Free 2D CMOS Multi Bridge Channel FET

This work introduces the channel-last scheme for the first time to implement 2-dimensional (2D) channel multi bridge channel field effect transistor (MBCFET). We demonstrated 2D channel MBCFETs with a three-layer bridge structure on a 200mm wafer scale without transfer process. The catalyst facilitated the growth of 2D channel, enabling conformal growth on the multi bridge structure at 400°C. Using this growth technique, we implemented both NMOS (MoS2) and PMOS (WSe2) MBCFETs, and verify operation in 80% of the 720 devices fabricated. In the case of 2D channel MBCFETs utilizing the channel-first scheme, multi stack structure which has three-layer of 2D channel was fabricated based on direct growth method. We also confirmed that the 2D channel in each layer remained inact and undamaged throughout the fabrication process.