Key Technologies of Scaling Embedded MRAM to 8nm Logic and Beyond for Automotive Application

We demonstrate successful development of a highly reliable embedded MRAM (eMRAM) for automotive applications compatible with the 8nm logic node. A yield of 90% was achieved through innovative magnetic tunnel junction (MTJ) stack engineering and advanced integration process at unit cell of 0.0I7/um2, which is smallest in size as known to date. The full functionality of write and read operations at temperature in the range of -40°C to 150°C was achieved along with fulfilling reliability criteria necessary for automotive applications. We also successfully decreased the rate of short failure down to 0.5ppm within the scaled cell pitch. These results suggest that our innovative technology has the potential to be extended to 5nm eMRAM technology node.