A High-Performance 2.2μm 1-Layer Pixel Global Shutter CMOS Image Sensor for Near-Infrared Applications

A high performance and low cost 2.2μm 1-layer pixel near infrared (NIR) global shutter (G/S) CMOS image sensor (CIS) was demonstrated for extended reality (XR) devices and automotive applications. In order to achieve high quantum efficiency (QE), thick silicon with extremely high aspect ratio full-depth deep trench isolation (FDTI) and backside scattering technology are implemented to increase optical path. Furthermore, thicker sidewall oxide for deep trench isolation and oxide filled FDTI were applied to enhance a modulation transfer function (MTF). In addition, high density 3-dimensional metal-insulator-metal capacitors were introduced to suppress temporal noise (TN) and improve dark characteristics. As a result, we have successfully demonstrated product-ready, industry-leading NIR G/S CIS with 2.71e- TN, dark current of 8.8e-/s, 42% QE and 58% MTF at 940nm.