Customized Design and Optimization of New Materials in Silvaco TCAD Tool by Understanding Inherent Material Defining Processes and Useful Simulation Methods: An Extensive Study

Accurate semiconductor device modelling in technology computer-aided design (TCAD) relies on precise material and method definition. Traditional software-defined materials often fall short in representing modern materials and specific design requirements and the same goes for method definition. This study comprehensively explores material and method defining procedures in Silvaco TCAD, emphasizing critical variables for electron device simulations. It introduces material-level and region-level definition approaches, highlighting the importance of material customization and solving method settings. Detailed descriptions of material properties, including carrier lifetimes and dielectric constants, enhance understanding as well as setting the right method for solving and obtaining the desired characteristics. The motivation for this research arises from challenges encountered with software-defined materials, where simulated values often deviate from theoretical ones, and there is a lack of output data in standard methods. This paper aims to elucidate the nuanced parameters involved in material and method definition, anticipating the growing need for personalized materials in semiconductor device simulations and making the right choice for methods. The study provides a solid foundation for TCAD research and development, addressing current issues and paving the way for future innovations.