DC Analysis of T Shape Gate, L Shape Gate, Y Shape Gate and Field-Plate Gate AlGaN/GaN Based HEMT

In this work, a T shape gate, L shape gate, Y shape gate and Field-plate gate is designed and its DC analysis is done respectively. The gate length of 100 nm is taken for all the designed AlGaN/GaN high electron mobility transistor(HEMT). From DC analysis an increase in drain current is seen for L shape and field plate gate HEMT. Also, T shape gate and L shape gate show a higher transconductance while T shape HEMT and Y shape gate HEMT have same transconductance. A low drain induced barrier lowering(DIBL) and Sub-threshold swing(SS) is observed for Y shape gate HEMT and T shape gate HEMT. An improved transconductance efficiency is seen for Y shape gate HEMT and T shape gate HEMT. Different design offers different advantage based on application like as an amplifier.