AlScN Ferroelectric Diode Enabled CAM With 4F² Cell Size and Low Thermal Budget (330 °C)

In pursuit of high-density three-dimensional integrated content addressable memories (CAMs), we experimentally reported the single AlScN ferroelectric diode-enabled CAM, having an ultra-compact cell size of 4 F2 and a low thermal budget of 330 °C. This is realized by implementing one resistor (1R)-architecture cell design coupled with utilization of emerging ferroelectric AlScN. Such an easily implementable yet highly effective approach for high-density integrated CAMs holds significant promise for propelling forthcoming data-intensive applications forward.