A Practicable Non-Linear De-Embedding Method for GaN Device Based on Load-Pull Measurements

This paper proposes a novel and fast approach for de-embedding RF packaged device to identify the I/V dynamic characteristics at the transistor current generator plane to facilitate effective power amplifier design. This method involves real-time updating the parasitic de-embedding network model by distinguishing the static components from the extrinsic plane with practical load-pull measurement data only. Successful validation of this methodology was achieved on a packaged 6×85μm² Gallium Nitride (GaN) device at 3.8GHz.