A 2-6 GHz High-Gain and High-Power-Density GaN Power Amplifier

This paper presents a 2–6 GHz wideband power amplifier (PA) with a high power density in a 0.25-μm GaN HEMT technology. The design of the wideband PA incorporates an optimal matching network for the output matching and a capacitively and inductively coupled resonator for the interstage matching. This PA achieves a small signal gain ranging from 18.3 to 23.3 dB, and the saturated output power (Psat) and the maximum power-added efficiency (PAEmax) exceed 34.7 dBm and 29.8% across the 2–6 GHz band, respectively. The chip area is only 2.43 mm², thus the proposed PA exhibits a highly competitive power density (mW/mm²).