Compact Size 2-Bit Riemann Pump RF-Power DAC with GaN HEMT Cell Using Charge Reuse Transistor Control Mechanism

A new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converter (DAC) is presented. This topology utilizes the method of turning on a high-side GaN transistor in a bridge configuration, with Charge reuse transistor control mechanism. Using this method, an RP DACs can be realized with downsizing the circuit scale and facilitating a multi-bit RP DACs. The proposed topology related to 2-bit conversion with data rates of 8 Gbit/s, is experimentally verified by fabricating a module using GaN HEMTs.