RC Modelling and Analysis of Read Path in eFlash Memory

eFlash (embedded Flash) memory is a type of nonvolatile memory integrated into semiconductor devices. The proposed work focuses on enhancing the read performance of embedded Flash (eFlash) memory through a comprehensive approach involving schematic development, RC modelling, and Monte Carlo analysis. The primary objective is to develop a detailed schematic for the read path in eFlash memory, capturing all essential components and interactions. Following this, an RC (resistor-capacitor) model will be constructed to represent the electrical characteristics of the read path, enabling precise analysis of resistive and capacitive effects. To assess the impact of process variations and other uncertainties on read performance metrics, Monte Carlo simulations will be conducted. These simulations will provide statistical insights into read speed, bit line differential voltage, and overall reliability. The outcomes of this work aim to optimize the read path design, ensuring consistent and efficient read operations in eFlash memory devices used in various applications such as microcontrollers, automotive systems, and consumer electronics.