Demonstration of a SiC Power Module with Integrated Hexagonal Boron Nitride (h-BN) Substrate for Direct-cooling

Power electronics, encompassing inverters, converters, and motor drives, are notorious for generating substantial heat during operation. Effective thermal management stands as a pivotal factor in preserving their functionality and reliability. Boron nitride (BN) emerges as a promising solution owing to its remarkable thermal conductivity and electrical insulation properties. This study delves into the utilization of hexagonal BN (h-BN) in a Silicon Carbide (SiC) power module, serving as both substrate and heatsink material, and scrutinizes its thermal efficacy. The recorded junction-coolant thermal resistance stands at approximately 1.91K/W, showcasing considerable potential for enhancement through refined processing methodologies.