A Rugged 1200V P-channel LDMOS in Bipolar-CMOS-DMOS Process with Global Potential Control Technology

The ultra-high voltage P-channel later diffused MOS (PLDMOS) is difficult to be integrated in 1200 V high voltage integrated circuits for level-down function, which limits some functions such as high side fault detection to apply. In this work, the global potential control technology solves the problems of leakage increase and on-state current expansion caused by PLDMOS. The isolation structure with embedded PLDMOS achieves off-state breakdown voltage $(B V)$ of 1675 V with a very low leakage current of $0.2 \mathrm{nA} / \mu \mathrm{m}$ at 1200 V, and the on-state BV (at $V_{G S}=-15 V$) of PLDMOS are 1635 V. In addition, the level-down function of fabricated PLDMOS is verified in circuit.