Performance Analysis of Silicon Carbide Processing for Power MOSFET

Power electronics focuses on improving power density, efficiency, and the integration of systems. Key to this development are power semiconductor devices, which control electric energy efficiently from the source to the load based on the load's needs. This project examines silicon carbide (SiC) power MOSFETs, looking at various processing techniques. It studies the SiC material to see how its structure and impurities affect its performance. Using Technology Computer-Aided Design (TCAD), researchers simulate and optimize SiC devices. SiC is known for its excellent electrical, thermal, and mechanical properties, making it suitable for high- power and high-temperature applications. TCAD lets researchers study how electric charges move, how heat behaves, and how electric fields interact within SiC devices. This helps in predicting performance, spotting issues, and designing SiC devices that are more efficient and reliable. By doing this, the development of SiC technology is accelerated, which benefits areas like power electronics, telecommunications, and renewable energy systems.