A 0.2-3 GHz Inductor-Less LNA Using Noise-Canceling and Dual-Resistor Feedback Technique

In this brief, an inductor-less low-noise amplifier (LNA) that utilizes a noise-canceling technique along with dual-resistor feedback is proposed. The conventional single-resistor feedback structure exhibits a performance constraint that limits the relationship between power gain and input matching. In contrast, the dual-resistor feedback structure proposed in this brief overcomes this limitation, enabling both high gain and low noise while maintaining good input matching. The dual-resistor feedback configuration includes a local feedback resistor which enhances the gain. Additionally, the global feedback resistor directly connect the inputs and outputs of the circuit, thereby breaking the constraints between the properties through feedback. The proposed LNA fabricated in 65-nm CMOS technology exhibiting a minimal NF of 2.08 dB within a 3-dB bandwidth that spans from 0.25 to 2.83 GHz, along with a peak power gain of 16.53 dB. The circuit operates with a power consumption of 10.6 mW under a supply voltage of 1.1 V, while occupying a core area of only 0.012 mm2.