Parametric Optimization of Diode-Connected Transistor Mixer: Conversion Gain Maximization and Nonlinear Distortions Minimization

The paper presents a new technique for parametric optimization of diode-connected transistor mixers. Parametric optimization is based on the criterion of conversion gain maximization and on the criterion of nonlinear distortion minimization. Analytical equations were obtained for bias voltage and transistor gate width corresponding to conversion gain maximum, and bias voltage corresponding to the nonlinear distortion minimum. The calculation and simulation results of the double-balanced mixer based on UMC 180nm CMOS were presented.