Comparative Analysis of GaN HEMT on β-Ga2O3 and conventional substrates for RF Applications

This work presents performance investigation of the impact of different substrates on GaN-HEMTs, with an emphasis on important parameters including drain current, transconductance, and cut-off frequency. GaN-HEMT device with gate length of 200 nm and gate width of 100 μm was used to study the device performance using different substrates such as 6H-SiC, Al2O3, GaN, and β-Ga2O3. It has been observed that β-Ga2O3, shows excellent device performance with a maximum drain current of 1.21 A/mm, a peak transconductance of 262.46 mS/mm, and a cut-off frequency of 50.59 GHz. These findings demonstrate that β-Ga2O3 can be used as a suitable substrate for improving GaN-HEMT performance, especially for high frequency high power application.