Enhancement of CIGS-Based Solar Cell Performance Through Acceptor Density Optimization: A SCAPS-1D Simulation Study

Photovoltaic (PV) technology has gained substantial worldwide attention because of its reputation as the most economically efficient method for addressing the increasing energy demands of the planet. CIGS (Copper Indium Gallium Selenide) refers to a particular kind of solar cell technology that makes use of thin-film materials. CIGS solar cells are manufactured by the process of depositing a thin layer of copper, indium, gallium, and selenium onto a substrate, often made of glass or a flexible material like metal or plastic foil. The CIGS solar cell has exceptional light absorption characteristics, long-term reliability, and cost-effective manufacturing. The CIGS material's bandgap is changeable and may be adjusted. Computational simulations have been undertaken using the SCAPS-1D instrument. Variations in the acceptor density (NA) from 1013 to 1019 mA/ cm2 in increments of 10 help one to examine the efficiency of CIGS solar cells. When the NA for CIGS-based solar cells is 1019 cm-3, the device runs as most efficient. With values of 29.11% for power conversion efficiency (PCE), 0.8V for open-circuit voltage (Voc), 42.1mA/cm-2 for short-circuit current density (JSC), and 85.99% for fill factor (FF), PV performance is thus increased. The outcomes should create more curiosity among researchers in the subject, which will drive them to build this framework even further and look for more means to increase its efficiency.