Measurement of Doping Concentration in P-type Silicon Carbide Epitaxial Wafers by Glow Discharge Mass Spectrometry

This study investigates the use of glow discharge mass spectrometry (GDMS) for accurately measuring doping concentrations in p-type silicon carbide (SiC) epitaxial wafers. P-type SiC is essential for numerous electronic applications due to its superior physical and electrical properties. Precise control and measurement of doping levels are critical for optimizing the electrical performance of SiC-based devices. GDMS, with its high sensitivity, enables the detection of trace dopants in epitaxial layers, offering a reliable method for analyzing these concentrations. A comparison with secondary ion mass spectrometry (SIMS) validates GDMS's accuracy and efficiency in assessing doping levels. The results demonstrate that GDMS is a valuable analytical technique for semiconductor materials, providing a rapid, efficient, and precise method for doping analysis in SiC.