Modeling of Dynamic RONin Hybrid Drain-Embedded Gate Injection Transistor

GaN high-electron-mobility transistors (HEMTs) have been confronted with trapping-induced dynamic ON-resistance ($R_{\text{ON}}$) degradation. The p-GaN drain (PD) structure, enabling hole injection and trap compensation, can effectively suppress dynamic $R_{\text{ON}}$ degradation. Accurate modeling of dynamic $R_{\text{ON}}$ of GaN HEMTs is important for the design of power electronics systems. In this work, the modeling of dynamic $R_{\text{ON}}$ is implemented with the impact of PD on trap compensation taken into consideration. The trapping effect and trap compensation are modeled by different RC units, which can modify the ON-state voltage ($V_{\text{DS,ON}}$) so as to reflect the variation of dynamic RON. Compared with traditional models, the implementation of the impact of PD in the model of dynamic $R_{\text{ON}}$ yields improved accuracy. The proposed model is validated by multi-pulse dynamic $R_{\text{ON}}$ tests and can be compatibly implemented in SPICE simulations for power electronic circuit design.