Switch-Off Mechanisms in GeAsTe Ovonic Threshold Switching Selector Device

Understanding the switching process in ovonic threshold switching (OTS) devices is an important research topic. Less attention has been paid to the fast switching-off process in the past, especially in modern nanoscale OTS devices. In this work, the OTS switching-off process in 1S1Rs operations are investigate. The underlying mechanisms can be explained by the dynamic resistance of OTS induced by the transition of defect clusters, and the impact of series resistance value on the switching off process is revealed. The defect cluster shrinking stage and rupture stage can be measured and characterized, respectively, which correspond to two distinct switch-off mechanisms. This research sheds new light on OTS switching mechanism and its impact on 1S1Rs operation.